Photoluminescence behavior of Ti-doped Zn2SiO4 thin film phosphors
نویسندگان
چکیده
This work investigates the luminescent properties and structure of Zn2SiO4:Ti thin-film phosphor, before and after annealing up to 1000C. The Zn2SiO4:Ti films are fabricated by RF sputtering using ceramic target. After annealing at 800C the β-Zn2SiO4 phase is formed, but this phase is not suitable for the application in electroluminescence. The willemite structure (α-Zn2SiO4) is formed after annealing at 900C or higher temperature. Concurrently, the Zn-O-Si bonding is observed by XPS analysis and it corresponds to the willemite structure. A broad PL peak locates at 386 nm is observed for the 700C annealed Zn2SiO4:Ti film. However, three PL peaks, centered at 380 nm, 398 nm and 402 nm, can be observed in the 900C annealed sample. All films exhibit a high transmission (>80%) in the visible spectrum, either before or after annealing.
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